Study of Self-diffusion in GaAs Crystal: Temperature Dependence

Vu Van Hung, Phan Thi Thanh Hong, Nguyen Thanh Hai


The self-diffusion of Ga and As atoms in GaAs crystal with the zince-blende structure (ZnS) is investigated by using the statistical moment method (SMM). The activation energy $(Q)$, diffusion coefficient $(D)$, and pre-exponential factor ($D_0$) are expressed by analytical closed expressions. The present analytical formulas are including the anharmonic effects of the lattice vibrations. The obtained results  are applied to GaAs crystal and the SMM calculations of $Q, D$ and $D_0$  are in agreement with the experimental data.

Full Text:


DOI: Display counter: Abstract : 49 views. PDF : 36 views.


  • There are currently no refbacks.

Editorial Office:

Communications in Physics

1st Floor, A16 Building, 18B Hoang Quoc Viet Street, Cau Giay District, Hanoi, Vietnam

Tel: (+84) 024 3791 7102 


Copyright by