Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors

Vu Kim Thai, Le Duc Anh, Hoang Anh Tuan


We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration.


CPA; diluted magnetic semicoductors; magnetization

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DOI: https://doi.org/10.15625/0868-3166/22/1/186 Display counter: Abstract : 113 views. PDF : 28 views.


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